Here at http://2016y2porject11.blogspot.co.uk you'll find the blog for our year 2 project blog titled "Modelling Electrical Properties of Thin High-k Gate Stacks (HfSiO, 70%Hf)"，by Zhuangzhuang Zhou, Ye Wang and Shuhui He, supervised by Dr I. Mitrovic.
In this project, we modelled the new transistors with thin high-k gate stacks to research its properties. High-k dielectric material substitutes the traditional oxide layer to achieve a more stable transistor to address some problem like large leakage current.
The type of structure, EOT, work function difference, flat-band voltage, mid-gap voltage, oxide charge density and the number of oxide charge were calculated and simulated through Matlab. Meanwhile, the effect of different concentration of HfSiO (30%, 50% and 70%) was evaluated.