In our project, we aimed to develop and characterize a quasi-vertical Gallium Nitride-on-Silicon Schottky barrier diode designed for high-frequency, high-efficiency applications—an essential step toward net-zero power systems. Our work involved plotting capacitance-voltage (C–V) and current-voltage (I–V) characteristics, and determining key parameters such as the ideality factor, turn-on voltage, on-resistance, doping concentration, and Schottky barrier height. We then compared our findings with the existing literature to evaluate whether our diode's ultra-low V_ON and minimized conduction loss (I × Von + I² × Ron) truly offer a competitive edge over conventional silicon-based devices.
Check out our blog for detailed data plots and in-depth analysis!